Abstract
We measured electronic Raman scattering originating from photoexcited L valley electrons in undoped, p-type ( N h =10 17 cm -3 ), and n-type ( N e =10 17 cm -3 ) germanium crystals at lattice temperature from RT to 76 K when stimulated by 1.58-eV laser light. From analysis of the power dependence of Raman intensity in the three samples and comparison of the spectral shape with reported data on heavily doped n-type crystal, the origin of this scattering is ascribed to electrons in the L valley. We analyzed this Raman scattering by using Ipatova's theory, and found that phonon assisted intervalley scattering was dominant in the temperature dependence of the width (FWHM of modified Lorentzian) of the electronic Raman scattering spectra. We also succeeded in reproducing the temperature dependence of scattering intensity taking into account the temperature dependent diffusion constant of electrons.
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