Electronic Raman scattering in the laser-etched silicon nanostructures

Abstract

Electronic Raman scattering is observed here in the silicon nanostructures. Observation of electronic Raman scattering in low dimensional silicon is possible due to coupling of Raman active phonons with photoexcited electrons found in the electronic states, which are available as a result of quantum confinement effect. Due to appreciable distribution of sizes in silicon nanostructures, a broad photoluminescence is observed revealing continuum of electronic states. Oscillator strength of electronic Raman scattering is found to increase with the increasing excitation laser power density.