Abstract
Raman scattering from photo-created free carriers in undoped GaP and GaAs 1− x P x ( x = 0.85, 0.73 and 0.66) under high excitation intensity has been studied. Two new Raman bands have been observed and assigned to electronic transitions from the split-off hole band to the heavy hole band and from the light hole band to the heavy hole band. The spin-orbit splitting energies in these crystals have been determined from the analysis of observed Raman bands, and compared with other experimental values.
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