Abstract
Growth conditions leading to kinking and branching in SnO2 nanowires have been investigated. Lower temperature growth at 750 °C leads to Y-junctions as seen previously in carbon nanotubes, whereas straight nanowires are obtained at 880 °C. Photoemission valence band spectroscopy is used to show that the carrier concentration and Fermi level position vary with diameter. Thus, the stem and branches in a Y-junction can have completely different semiconducting properties, leading to opportunities in novel device construction.
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