Abstract
The electronic properties of unstrained unrelaxed InAsxSb1−x alloys have been determined in a wide range of alloy compositions using IR magnetospectroscopy, magnetotransport and IR photoluminescence. All studied alloys have n-type background doping with electron concentration decreasing with the Sb content. The composition dependence of the background doping concentration follows an empirical exponential law in a wide range of compositions. Both bandgap and electron effective mass dependence on alloy composition exhibit negative bowing reaching lowest values at x = 0.63: Eg = 0.10 eV, m* = 0.0082 m0 at 4.2 K. The bowing coefficient of 0.038 m0 obtained for the electron effective mass is in good agreement with that obtained from the Kane model.
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