Electronic properties of thin Ni 2MnIn Heusler films

Abstract

The half-metallic Heusler alloy Ni 2MnIn is of high interest for use in spin electronics since at the Ni 2MnIn/InAs interface a spin polarization of 100% is predicted. We prepare high-quality thin films of 20–60 nm thickness by co-evaporation and DC magnetron sputtering. Point-contact Andreev reflection spectroscopy yields a spin polarization of up to 54%. By spectral generalized magneto-optical ellipsometry, the dielectric and magneto-optical properties are determined and ferromagnetic behavior below the Curie temperature T C = 318 K is proved.