Abstract
Cd 2GeO 4 has been prepared from CdO and GeO 2 by solid state reaction at 850°C as a low resistivity (ϱ ⋍ 1 Ω · cm) n-type semiconductor. Its conductivity is increased by doping with trivalent metal ions and decreased by heating oxygen. The electrons originate from shallow donors and their mobility is determined by a combination of large polaron formation and impurity scattering. From photoelectrolysis data the band gap is determined to be indirect, at 3.15 eV; the first direct transition occurs at 4.1 eV. The relations between conditions of preparation, defect structure, and carrier concentration have been examined, but the available data do not allow an unambiguous identification of the nature of the donor center.
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