Electronic properties of relaxed surfaces, interfaces, overlayer systems and defects at surfaces or interfaces; applications of the scattering theoretic technique

Abstract

We present the electronic structure of ideal and relaxed (110) InSb surfaces, of (110) Ge-GaAs interfaces in heterojunctions and overlayer systems and of Ga and As vacancies at (100) GaAs surfaces. All systems can be treated exactly using the scattering theoretic method on the basis of empirical tight binding bulk descriptions. The results are discussed in terms of surface (interface) bandstructures, wavevector-resolved layer densities of states and vacancy-induced total changes in the density of states.