Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon

Abstract

Lightly-boron-doped CVD amorphous Si with a doping ratio between 3.3×10-7 and 2.5×10-5 was hydrogenated by hydrogen plasma annealing, and the electronic properties including photoconductivity and photoluminescence were investigated. At a doping ratio of 4×10-6 amorphous Si with the intrinsic property is produced, of which the photoconductivity at AM1 (100 mW/cm2) is 3×10-5 Ω-1cm-1, the localized state density in the mobility gap is lowest, and the photoluminescence intensity is highest. It is suggested that some boron atoms become inactive, forming B-H bonds with penetrating hydrogen atoms at doping ratios above 4×10-6.