Electronic properties of multiple delta-doped layers in silicon and GaAs

Abstract

Self-consistent electronic subband structure calculations of periodic n-type delta (δ)-doped layers in Si and GaAs are performed within the local density-functional approximation. The behavior of the energy levels, potential profiles, miniband occupancies, and Fermi level position with the variation of the dopant concentration ND and the spacing between the δ-layers ds is examined for Si δ-doping in GaAs and Sb δ-doping in Si. The physical properties of these δ-doping structures show a strong dependence on ds, reflecting a transition from isolated delta-wells to superlattices as ds decreases. The crossover involving the change from a two-dimensional to three-dimensional behavior is discussed for both kinds of systems. © 1994 John Wiley & Sons, Inc.