Abstract
We report on the electronic properties of β-(InxGa1-x)2O3 alloys with different In-content up to 18.75% using density functional theory (DFT) calculations. The effect of In-content on the band structures as well as the crystal structures of β-(InxGa1-x)2O3 alloys is presented and discussed. Our analysis shows that β-(InxGa1-x)2O3 alloys exhibits indirect gap property, with the band gap reducing from 4.817 eV to 4.422 eV when the In-content increases up to 18.75%. The bandgap energy corresponds to the wavelength region extending from 255 to 280 nm, which implies the possibility for β-(InxGa1-x)2O3 alloys to be applied in the deep UV photodetectors. The electron and heavy hole effective masses are also obtained for the first time based on the band edge dispersions of the β-(InxGa1-x)2O3 materials. Additionally, the effect of band parameters on the impact ionization processes using β-(InxGa1-x)2O3 materials are analyzed. Our new insight regarding the electronic properties indicate the potential of β-(InxGa1-x)2O3 alloys in deep ultraviolet photodetector applications.
Highlights
In recent years, gallium Oxide (Ga2O3) semiconductor materials have drawn massive interests for technological applications such as high-power transistors, ultraviolet (UV) photodetectors and advanced micro/nanoelectromechanical systems.[1,2] The driving force behind the research in Ga2O3 stems from the advantage of the oxide material in possessing extraordinary material properties including high breakdown electric field, photon absorption in the ultraviolet regime, high electron mobility, excellent mechanical strength as well as robustness with respect to chemical and thermal stability.[3]
The most stable phase at ambient environment for gallium oxide is monoclinic phase and the material is commonly known as beta-phase gallium oxide (β-Ga2O3). β-Ga2O3 can be realized with various epitaxial techniques including Czochralski, edge-defined film-fed growth, molecular beam epitaxy (MBE), low pressure chemical vapor deposition (LPCVD).[9,10,11,12]
Further band structure revealed that the conduction band minimum of β-(InxGa1-x)2O3 with different Incontent are always located at Γ point and the valance band maximum are always located at the same point in Γ→Y direction
Summary
Gallium Oxide (Ga2O3) semiconductor materials have drawn massive interests for technological applications such as high-power transistors, ultraviolet (UV) photodetectors and advanced micro/nanoelectromechanical systems.[1,2] The driving force behind the research in Ga2O3 stems from the advantage of the oxide material in possessing extraordinary material properties including high breakdown electric field, photon absorption in the ultraviolet regime, high electron mobility, excellent mechanical strength as well as robustness with respect to chemical and thermal stability.[3] In conjunction with the availability of various synthesis methods for Ga2O3 materials and nanostructures, the Ga2O3 crystal is a promising technologically critical material class for various types of devices.[4,5]. There are several crystalline phases including α, β, γ, ε and δ polymorphs.[7,8] The most stable phase at ambient environment for gallium oxide is monoclinic phase and the material is commonly known as beta-phase gallium oxide (β-Ga2O3). β-Ga2O3 can be realized with various epitaxial techniques including Czochralski, edge-defined film-fed growth, molecular beam epitaxy (MBE), low pressure chemical vapor deposition (LPCVD).[9,10,11,12] The variety of β-Ga2O3 synthesis methods allows the epitaxy of various nanostructures like nanowires, nanorods and nanosheets, providing excellent opportunities for exploring β-Ga2O3 as a new structural, electronic and optical material
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