Abstract
In this paper, we give a short status report on the electronic properties of metal/III–V semiconductor interfaces. A large numer of metals, ranging from strongly reactive Ni, Co, Cr, Mn, Pd and Al to less reactive or nonreactive Cu, Ag, Au, Ga, Sn and In, have been studied for GaAs(110) and InP(110) systematically with the intent to correlate the interfacial chemistry with the Schottky barrier formation. Soft X-ray photoemission spectroscopy based on synchrotron radiation has been used to characterized the chemical reactions at the interface on an atomic scale, and the barrier heights for these structures have been compared to those for thick metal films prepared under identical conditions and measured with standard electrical methods. This review will illustrate, with a few examples for metal overlayers (Ni, Al, In) on InP(110), the current status of this field.
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