Abstract
We have witnessed tremendous progress of metal halide perovskite (MHP)-based optoelectronic devices, especially in the field of photovoltaics. Despite intensive research in the past few years, questions still remain regarding their fundamental optoelectronic properties, among which the electronic properties exhibit an interplay of numerous phenomena that deserve serious scrutiny. In this Focus article, we aim to provide a contemporary understanding of the unique electronic properties that has been resolved by the community. First introducing some of the basic concepts established in semiconductor physics, the intrinsic and extrinsic electronic properties of the MHPs are disentangled and explained. With this, the complex interplay of interface-, dopant-, and surface state-induced electronic states in determining the electrostatic landscape in the material can be comprehended, and the energy level alignment in device architectures more reliably assessed.
Highlights
metal halide perovskite (MHP), which are key for achieving the full potential of these materials in applications
In many reports on MHP-based devices we can see schematic diagrams of how the frontier energy levels of the involved materials align relative to each other, but these diagrams are predominately presumed from pertinent parameters that were reported for the individual materials
In lieu of an actual measurement of the energy level alignment, an assumed level diagram can be a useful zeroth-order approximation, but one should be aware of the fact that it may be far Fengshuo Zu received his doctorate in physics from the Department of Physics, Humboldt-Universitat zu Berlin (HU Berlin) in 2019
Summary
MHPs, which are key for achieving the full potential of these materials in applications. An estimated energy level diagram may be off with respect to the actual level alignment by several 100 meV, which can introduce serious problems when trying to link energy levels and devices performance The goal of this Focus article is to introduce the concepts of semiconductor electronic properties and energy levels for the most widely studied MHPs, with restriction to those bulk, surface, and interface effects that appear to be on a solid foundation at present. Not concerned with the electronic structure on an every-day basis to make better informed and critical judgements on how to use published data on MHP electronic properties for their own purpose
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