Electronic properties of isolated Ga N As M clusters: photoionization-, photodissociation- and photoluminescence quantum yields

Abstract

Photoionization quantum yields of GaNAsM clusters with N + M = 85 ± 5 atoms in the spectral range of ω = 3.5–6.4 eV have been investigated by measuring their total photoabsorption and photoionization cross sections. It is found that the photoionization quantum yields of these clusters are strongly increased by about two orders of magnitude against the values of bulk GaAs. Photodissociation of the cluster provides another efficient channel whereas photoluminescence plays a minor role for the observed cluster size distributions with N + M typically between 30 and 130 atoms.