Electronic properties of hydrogen-related complexes in pure semiconductors

Abstract

Hydrogen has been shown to activate the neutral impurities carbon, silicon and oxygen in ultra-pure germanium and form shallow level complexes. The double acceptors beryllium and zinc in silicon and germanium, as well as the triple acceptor copper in germanium, can be partially passivated, leading to single hole acceptors. The study of the electronic level spectrum of the single carrier bound to these centers at low temperatures has provided much information on symmetry and composition. Most centers reveal a symmetry axis along [1 1 1] and are static. In some cases hydrogen has been found to tunnel between equivalent real space positions. Photothermal ionization spectroscopy (PTIS) has been the most important tool for the study of the optical transitions of the hole (electron) in these hydrogen containing complexes. This photoconductivity technique combines high sensitivity with high resolution and permits the study of shallow acceptors or donors present at concentrations as low as 108 cm-3. Even lower limits may be attained under favorable circumstances.