Abstract
A set of samples with superlattice (SL) or multilayer structures in which the period was composed of 6 ML of Ge and a Si spacer were grown in order to study the localization of the electrons. The structural and optical properties were investigated. The growth of Ge islands was observed just for the SL. The concentration of defects was drastically increased through proton irradiation with different fluences. A high radiation hardness was obtained for the Ge islands embedded in the SL.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
