Abstract
The authors report theoretical results pertaining to the electronic properties of Ga(In)As-based quantum wells and superlattices. The focus is on a comparison between the Ga0.47In0.53As-InP and Ga0.47In0.53As-Al0.48In0.52As systems where the well-acting material is the same, the barrier-acting materials are very similar but where the conduction band offsets are very different ( approximately=0.24 and 0.44 eV respectively). Features of electron and hole energy levels as well as scattering lifetimes are discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
