Electronic properties of filtered cathodic vacuum arc (FCVA) deposited silicon thin films

Abstract

The electronic properties of silicon films deposited in a filtered cathodic vacuum arc (FCVA) from a highly doped silicon target have been studied by the authors, and correlated with growth conditions. Films with the best electrical properties were deposited with elevated growth surface temperatures (200–300°C) and low background pressures (~10-4 torr) of hydrogen. The number of times that the cathodic arc had to be retriggered during the deposition of a film also significantly affected its electronic properties. Room temperature photo-conductivities ~10-6(Ω.cm)-1 have been measured at AM1 illumination. This is the first time photo-conductivity has been observed in FCVA deposited silicon.