Abstract
We have investigated in detail the electronic transport properties of half metallic CrO2 powder-based devices, fabricated using optical lithography and field alignment technique. A transition in the conduction mechanism from spin-dependent intergranular tunneling to inelastic hopping was observed at 215K. This transition temperature shifts to 230K in the presence of 10kOe field cooling due to reduction of the spin-independent hopping conductance channel. I–V characteristics exhibit strong temperature dependence and are non-linear even at room temperature. Our experimental results are in good agreement with a simple theoretical model. A novel ‘double switching’ phenomenon was observed in the I–V curves below the transition temperature.
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