Electronic properties of disordered zigzag carbon nanotubes

Abstract

We study the density of states of zigzag carbon nanotube (CNT) doped with both Boron and nitrogen atoms as donor and acceptor impurities, respectively. The effect of scattering of the electrons on the electronic spectrum of the system can be obtained via adding random on-site energy term to the tight binding model Hamiltonian which describes the clean system. Green's function approach has been implemented to find the behavior of electronic density. Due to Boron (Nitrogen) doping, Fermi surface tends to the valence (conduction) band of semiconductor CNT so that the energy gap width reduces. Furthermore the density of states of disordered metallic zigzag CNTs includes a peak near the Fermi energy.