Electronic properties of AnSn3 (An = Th, U, Np, and Pu)

Abstract

The energy band structures of AnSn3 (An=Th, U, Np, and Pu) are investigated by using a relativistic linear augmented plane wave method with the exchange-correlation potential in the local density approximation. The energy bands near the Fermi level are mainly caused by the hybridization between the 5f and Sn 5p electrons of the actinides. The similarity of the Fermi surface structures in the AnSn3 compounds can be understood by using the change in the electron numbers inside the Fermi surfaces based on the rigid-band picture. The theoretical angular dependence of the de Haas-van Alphen frequencies in ThSn3 has been investigated.