Abstract
AbstractThe influence is studied of the lattice topology in the electronic properties of a tetrahedrally bonded amorphous semiconductor, typically a‐Si. The system is described by a nearest neighbour tight‐binding Hamiltonian, defined on a pseudolattice. The topology corresponding to the perfect gasket defined using hexagons as its basic structure is similar to the crystalline diamond lattice. The continuum random network is simulated by generating vacancies in the gasket lattice where dangling bonds are eliminated by saturation. The electronic density of states and the ring statistics of the disorder lattice are studied using a real space renormalization technique within the context of the Green function formalism.
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