Abstract
The absorption properties of InAs–GaAs dots grown in the Stranski–Krastanow mode are determined. Our computational approach accounts for the influence of the inhomogeneous strain in these structures on both the carrier masses and confining potentials, and includes the effects of valence band mixing. We have identified the optical transitions responsible for the principal features in the absorption spectrum. Our findings unite the apparently conflicting assignments of strong transitions to luminescence features in two recent experimental studies.
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