Electronic properties and hydrogenic impurity binding energy of a new variant quantum dot

Abstract

In this work, we have studied the electronic states with and without a donor impurity positioned on the first rectangular-shaped surface ( θ = 0°) of the new variant quantum dot (VQD) of azimuthal angle θ , radius R , and height H . The VQD takes several forms depending on the value of the geometric angle θ , which it passes from zero to the limit of 360° to reach the cylindrical form. Within the framework of the effective mass approximation and the limit of the infinite potential, we have obtained the eigenvalues from the Schrödinger equation by using the finite difference method (FDM). The binding energy is calculated after fixing the donor impurity at the center and the eccentric positions of the surface. Indeed, the binding energy takes the clear maximums when the impurity moves vertically and horizontally over the surface. It is very sensitive to each value of the geometric angle, the position of the impurity, the radius, and the height. We think that this new work may reveal important practical interests and provide another way to adjust electronic transitions in optoelectronic devices . • Electronic states and hydrogenic impurity binding energy of a new variant quantum dot is studied. • The effective mass approximation, the infinite potential and the finite difference method are adopted. • The binding energy is obtained after fixing the donor impurity at the center and the eccentric positions of the surface. • The energies depend to the geometric angle, the position of the impurity, the radius, and the height.