Abstract
Microscopic information on the localized electronic states in chemically sensitized emulsion grains of silver bromide is obtained by luminescence-modulation spectroscopy at liquid helium temperature. Electronic functions of chemical sensitization which is absolutely necessary for the high photographic sensitivity are twofold. One is the formation of hole-trap to suppress electron-hole recombination in the case of reduction- and hydrogen-sensitization. The other is the formation of a deep electron-trap to trigger the nucleation of latent-image in the sulfur- and sulfur-plus-gold-sensitization. The electron-trap essential for sulfur-sensitization is concluded to be due to the dimer of the (substitutional sulfur ~ interstitial silver) complex. A structural model and mechanism of deep electron-trapping are proposed for the sulfur dimer center, and the latent-image nucleation process is discussed for sulfur-sensitized emulsions.
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