Abstract
The results of investigations of electrical, optical, and photoelectric properties of CdIn2Te4 crystals, which were grown by the Bridgman method are presented. It is shown that electrical conductivity is determined mainly by electrons with the effective mass mn = 0.44m0 and the mobility 120–140 cm2/(V s), which weakly depends on temperature. CdIn2Te4 behaves as a partially compensated semiconductor with the donor-center ionization energy Ed = 0.38 eV and the compensation level K = Na/Nd = 0.36. The absorption-coefficient spectra at the energy hν < Eg = 1.27 eV are subject to the Urbach rule with a typical energy of 18–25 meV. The photoconductivity depends on the sample thickness. The diffusion length, the charge-carrier lifetime, and the surface-recombination rate are determined from the photoconductivity spectra.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
