Electronic, optical and thermal excitation of plasma waves in HEMTs: A theoretical study

Abstract

We investigate the influence of collective plasma modes in a field-effect transistor channel under different excitations and biasing conditions. First, we study the case of a device externally-excited by a harmonic optical beating or an electronic excitation and current-driven at the drain. The harmonic and continuous responses of the transistor are calculated using a pseudo-two-dimensional hydrodynamic approach. They show sharp resonances related to the first odd plasma modes, whose frequencies and amplitudes can be modified by playing on the drain bias. Then, through the generalized impedance-field method we calculate also the spectral density of drain voltage fluctuations in the absence of external excitations. Also these noise spectra exhibit peaks corresponding to the odd plasma modes.