Abstract
Migrating hydrogen in GaAs has an electronic level located 0.5 eV above the top of the valence band. The carbon-hydrogen complexes observed in unintentionally doped LEC grown materials are stable up to at least 450°C. Hydrogen-lattice defect complexes are stable up to 600–650°C in as-grown LEC samples.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have