Abstract
High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid $ =35$\pm$4 and a value for the effective mass of $m^*\approx0.017 m_0$, where $m_0$ is the electron mass in vacuum. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g-factor can be neglected. Accordingly, the obtained effective g-factor and the effective mass can be quantitatively explained in a single particle picture. Additionally, we explore the magneto-transport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.
Highlights
The narrow-gap III-V binary compound InSb is well known for its combination of a light effective mass, high electron mobility, strong spin-orbit interactions, and a giant effective g factor in the conduction band [1,2,3,4,5,6]
In InSb nanowire-based quantum dots, the effective g factor is more than 40% larger than that in the bulk material because of the level-to-level fluctuations arising from spin-orbit interaction [14,18]
In Ref. [12], the effective g factor is enhanced linearly as a function of spin polarization over a range of filling factors ν = 2–7 Different from the results listed above, the bare g factor deserves to be investigated more for the research related to topological superconductivity, because the band gap should be opened by the Zeeman splitting while applying a relatively small parallel magnetic field [20]
Summary
The narrow-gap III-V binary compound InSb is well known for its combination of a light effective mass, high electron mobility, strong spin-orbit interactions, and a giant effective g factor in the conduction band [1,2,3,4,5,6]. Limited by the low carrier mobilities, the coincidence measurement in a tilted magnetic field can only be accomplished at a relatively low filling factor.
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