Abstract
Kinetic processes of nanoparticle formation by ion implantation was studied for the insulators of a-SiO2, LiNbO3, MgO·2.4(Al2O3) and PMMA, either by changing ion flux or by using a co-irradiation technique of ions and photons. Under Cu-implantation of 60keV Cu−, nanoparticles spontaneously formed without thermal annealing, indicating radiation-induced diffusion of implants. The high-flux implantation caused instable behaviors of nanoparticle morphology in a-SiO2, LiNbO3 and PMMA, i.e. enhanced atomic rearrangement or loss of nanoparticles. The spinel MgO·2.4(Al2O3) also showed nanoparticle precipitation at 60keV, but the precipitation tendency is less than the others. Combined irradiation of 3MeV Cu ions and photons of 2.3eV or 3.5eV indicates that the electronic excitation during ion implantation significantly enhances nanoparticle precipitation, greatly depending on photon energy and fluence. The selectivity for photons can be applied to control nanoparticle precipitation.
Published Version
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