Abstract
It is shown that the anion dependence of the derivative of the d-core effect factor D and of the proportionality constant B, used in the Goyal-Sarkar semi-empirical power law relation between electronic dielectric constant and the interionic separation in III–V semiconductors, leads to serious theoretical inconsistencies. On the other hand, a careful use of Philips-Van Vechten formalism gives values of the strain derivatives of the electronic dielectric constants for GaP and GaAs which are in excellent agreement with experimental values, justifying anion-independent proportionality constant and d-core factor derivative. Finally, the values of the strain derivatives of the dielectric constants of a large number of III–V semiconductors are calculated.
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