Abstract
The analysis of an earlier paper is extended to calculations of the electronic density of states for potentials with both s and p bound states. An alternative description of the method is given and the formalism developed for a computationally efficient approach. Results are presented showing how the density of states changes as the potential parameters and the structural parameters are varied for a disordered tetrahedrally bonded system. The value of the approach as a basis for extension to calculations of other properties, such as phonons, and to more complex structural systems is discussed.
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