Electronic defects in silicon induced by deuterium plasma treatment

Abstract

We have used subgap defect absorption spectroscopy and thermal effusion measurements to study the effect of hydrogen plasma exposure on the defect formation and hydrogen uptake in crystalline and amorphous silicon. Beyond a critical sample bias, hydrogenation leads to a pronounced creation of electronic defects in the Si gap. In crystalline Si the density of these defects is found to be correlated with the high temperature thermal effusion peak. A simple structural model for this correlation is presented.