Abstract
Defect levels in plasma‐deposited amorphous silicon were investigated with deep‐level transient spectroscopy. Both voltage‐pulse excitation and photoexcitation were used to fill deep levels with charge carriers in Schottly‐barrier diodes, and the current transient was monitored to detect trap emission. The results are analyzed with a conventional trap‐limted emission model to deduce trapped‐charge distributions in the bandgap of the amorphous silicon. Applicability of the model is critically evaluated.
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