Abstract
A brief outline is presented on recent developments in deep-level characterization and identification in semiconductors which have been made possible by the application of methods other than junction space charge measurements. Chalcogens and several transition metals in silicon are used as examples in order to show how important parameters and properties of defects can be revealed by using spectroscopic methods. One of the methods, namely photothermal ionization spectroscopy is discussed in more detail.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
