Abstract
We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. This approach can be also translated to the other optical frequency ranges.
Highlights
Structured composite materials are playing an increasingly important role in overcoming the deficiency of natural materials to obtain a functional response in the terahertz (THz) frequency range
We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates
Further optimization may result in improvement of device performance and practical applications
Summary
Structured composite materials are playing an increasingly important role in overcoming the deficiency of natural materials to obtain a functional response in the terahertz (THz) frequency range. The recent progress in THz metamaterials [5,6,7,8,9], photonic crystals [10,11,12,13,14], and subwavelength metallic hole arrays [15,16,17,18,19,20], proposed or demonstrated high performance functional THz devices, which may result in a complete manipulation of THz waves Since their experimental demonstration in the optical frequency range [21], subwavelength metal hole arrays have attracted considerable attention regarding extraordinary optical transmission at THz frequencies [16,17,18,19].
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