Abstract
The Boltzmann equation for polar semiconductors is solved formally as a series expansion. The form of the collision operator used is that derived by Howarth and Sondheimer. The method of solution is based on an iteration procedure analogous to Neumann's series solution for an integral equation. The solution has been computed numerically as a function of electron-energy-phonon-energy for certain typical combinations of values of the temperature and degeneracy parameters. Guided by these `control solutions' algebraic equations are derived which approximate to the Boltzmann equation in important limiting cases. From these algebraic equations the conductivity and the thermoelectric power are deduced.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
