Abstract
The electrical resistivity of bulk Se1−x Te x glasses is reported as a function of pressure (up to 8 GPa) and temperature (down to 77K). The activation energy for electronic conduction has been calculated at different pressures. The samples with 0⩽x⩽0·06 show a single activation energy throughout the temperature range of investigations. On the other hand samples with 0·08⩽x⩽0·3 show two activation energies in the different regions of temperature. The observed behaviour has been explained on the basis of band picture of amorphous semiconductors.
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