Abstract
Amorphous thin films of SeTe20Pbx (0 < x < 2) have been prepared by thermal evaporation. The effect of 40 MeV 28Si5+ ion irradiation on the electronic conduction of SeTe20Pbx (0 < x < 2) thin films has been investigated. The DC electrical conductivity of the films increases by two to three order of magnitude with increase in irradiation fluence from 1012 to 5×1013 ions/cm2. The DC activation energy of conduction also increases with increase in irradiation fluence. Results have been explained on the basis of structural disorders and defects formed due to heavy ion irradiation.
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