Abstract
Isothermal capacitance transient spectroscopy (ICTS) has been applied to study single grain boundaries of ZnO:Pr varistors using micro-electrodes prepared on the surface of the ZnO ceramic. A similar ICTS peak was observed as in the case of bulk measurement. This peak has directly proved the existence of the electronic interface states and formation of double Schottky barrier (DSB) at the grain boundary. The quantitative analysis of ICTS peak height revealed that the higher density of the interface states gave the higher nonlinearity of a I–V relation. Photo-ICTS spectra were also examined for the single grain boundary. The peaks shifted to shorter time compared with the dark-ICTS spectrum when the irradiated light brought about an increase of the junction capacitance. This result gave detailed information about deep electronic interface states of DSB.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
