Abstract
Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current–voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung’s method and Norde’s technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I–V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor.
Highlights
Deoxyribonucleic acid (DNA) has many advantages, mainly due to its vast accessibility, size manipulation capabilities and natural self-assembly properties [1]
Electronic features of a Schottky diode is described by its barrier height, ideality factor and series resistance parameters
We report the study of the current transport characteristics of Au/DNA/ITO Schottky diodes exposed to alpha radiation between 0–0.24 Gy
Summary
Deoxyribonucleic acid (DNA) has many advantages, mainly due to its vast accessibility, size manipulation capabilities and natural self-assembly properties [1]. These DNA-Based Diodes Could Be Employed to Detect Alpha Particles important role in electronic states of metal/silicon semiconductor structures [1, 5]. Whenever any radiation passes through a semiconductor device, different effects are observed depending on the range of energy of the particle (proton, alpha, neutron and both types of beta) and rays, such as gamma radiation [20]. They numerically discovered that the metal-DNA lattice behaved as a semiconductor with metal ions through the Hall parameters [30] In this current work, we report the study of the current transport characteristics of Au/DNA/ITO Schottky diodes exposed to. Initial denaturing at 95°C was extended to 5 minutes and the final extension was at 72°C for 5 minutes [32, 33]
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