Abstract
The electronic behavior of GaAs:O-Ge structures having chemisorbed oxygen at the interface is shown to be significantly different from that expected in a conventional GaAs-Ge heterointerface. The presence of oxygen at the interface has been detected by performing depth-compositional analysis using Auger Electron Spectroscopic technique in conjunction with Ion Milling. In addition, in nGaAs:O-pGe samples interfacial oxygen bonding to arsenic atoms was also confirmed by ESCA studies which reproducibly revealed a chemical shift of about 4.4 eV in the arsenic 3d peak. A novel features observed in the electronic transport characteristics of GaAs:O-Ge devices is the inversion of V-I and C-V characteristics. Theoretically, observed V-I and C-V characteristics are explained by a new model involving the presence of inversion and/or accumulation layers localized at the heterointerface.
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