Electronic channels for acoustic transport in semiconductor heterostructures

Abstract

We demonstrate electronic waveguides for the ambipolar transport of electrons and holes by surface acoustic waves (SAWs) in buried (Al,Ga)As quantum well (QW) structures, which do not require deep-etching for their fabrication. They are defined by tailoring the SAW-induced piezoelectric potential in the QW plane using thin metal stripes deposited onto the piezoelectric cap layer of the QW sample. Acoustic transport experiments show the enhanced capture and acoustic transport of photoexcited carriers underneath the metallic surface stripes.