Abstract
Information concerning electronic carrier transport and photogeneration in films of undoped C60/70 has been obtained from photoinduced xerographic discharge curves in sublimed films up to 40 μm in thickness. The results, using strongly absorbed light, unambiguously reveal that the electron range, μτ, where μ is the electron drift mobility and τ the deep trapping lifetime, is ∼10−7 cm2/V. By contrast, a barely detectable discharge is observed to be associated with holes. The photogeneration efficiency for electrons is field dependent with a value at 4000 Å of 5×10−2 at a field of 2×105 V/cm. These results are discussed in a context where both charge photogeneration and transport in undoped C60/70 involve localized electronic states.
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