Abstract

 
 
 
 The fabrication of Schottky diodes using electroplated n- type CdSe thin films and gold metal contact have been successfully achieved. The electronic properties of the fabricated diodes with the device structure glass/FTO/n-CdSe/Au have been investigated by current-voltage (I-V) and capacitance-voltage (CV) measurement techniques. The I-V characteristics revealed a good rectifying behaviour with an ideality factor of 1.50, a potential barrier height (ϕb) >0.79 eV and rectification factor (RF) surpassing 102 at 1.0 V. Results from the C-V measurement showed that the fabricated Schottky diodes have doping density of ~1.61 × 1017 cm-3 and a built-in potential (Vbi) of 0.24 V which falls in the range of reported Vbi values for Schottky diodes. Both I-V and C-V parameters revealed that the CdSe Schottky diodes possess qualities for excellent performance in electronics circuit or as an electronic device.
 
 
 
 
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