Abstract
The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literature, we emphasize that the graphene interfaces formed between the active material and its environment are of paramount importance, and how interface modifications enable the fine-tuning of the transport properties of graphene. This review provides a renewed attention on the understanding and engineering of epitaxial graphene interfaces for integrated electronics and photonics applications.
Highlights
The properties of graphene as well as other members of the two-dimensional (2D) class of materials differ fundamentally from those of typical electronic materials, which makes this class very attractive for future device applications [1]
We explore recent advancements made in the charge transport research on epitaxial graphene (EG) synthesized on SiC and Si substrates as these are necessary ingredients for technological applications
In Reference [21], the authors of this review demonstrate that the mobility versus sheet carrier concentration values for EG/SiC(0001) from Reference [56], and EG/3C-SiC can be fitted with good confidence using the same power law, which demonstrates a common conductivity of ~3 ± 1 (e2 /h) close to the minimum quantum conductivity of graphene (Figure 13)
Summary
The properties of graphene as well as other members of the two-dimensional (2D) class of materials differ fundamentally from those of typical electronic materials, which makes this class very attractive for future device applications [1]. Reconstruction [9] of the SiC surface The modification of this reconstruction at the interface after graphene synthesis, often termed the buffer layer, has a profound effect on EG conductivity. For graphene on 3C-SiC films on Si surfaces, the synthesis route traditionally employs a modified sublimation approach [16,17,18,19,20] or, more recently, a precipitation method using a metal catalyst alloy with evidence pointing to an epitaxial ordering [21]. For the case of EG on 3C-SiC(100)/Si, no buffer layer is formed, but the current state-of-the-art results in interface oxidation/silicates, which contribute to the conductivity [21].
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