Electronic and transport properties of different boron-doped(12,0)/(6,6) carbon nanotube junctions

Abstract

The local density of states (LDOS) and conductance of several(12,0)/(6,6) carbon nanotube junctions (CNTJs) with two substitutional boron atoms havebeen calculated by the tight-binding model and the Green’s function method. Itis found that the conductance gap of boron-doped CNTJs changes differently,depending on the different boron positions. For some boron-doped positions, the largeconductance gap of undoped CNTJ could disappear completely even if the rotationalsymmetry is still kept in the doped CNTJs. Our results clearly show that thetransport property of a metal–metal CNTJ depends not only on the rotationalsymmetry of its interface but also on the doped impurity positions on the interface.