Electronic and Transmission Properties of Low Buckled GaAs Armchair Nanoribbons

Abstract

The electronic and transmission properties of N atom width (N: 4, 8, 12, 16)low-buckled (LB) armchair GaAs hydrogen (H) passivated nanoribbons (NA GaAs NRs) are studied with the help of first-principle theory. In low buckled armchair GaAs nanoribbon, quantum confinement effect is observed due to which all of the investigated NA GaAs NRs with H passivated are found to be semiconducting. The fundamental direct band gap at k-point Г (gamma) have been calculated, which exhibit interesting width dependent (N: 4~16) behaviour of bandgap. The H passivated edge of NA GaAs NRs with different width of nanoribbons provides great flexibility to modulate fundamental bandgap. The transmission coefficient is calculated from which thermal conductance has been calculated forall width of GaAs armchair nanoribbon.