Abstract
Electronic and thermoelectric properties of ternary chalcopyrite type CdSnAs2 were studied using the first principles density functional calculations performed in the full potential linear augmented plane wave (FP-LAPW) method as implemented in the WIEN2 k code. The thermoelectric properties are calculated by solving the Boltzmann transport equation within the constant relaxation time approximation. The calculated band gap using the Tran-Blaha modified Becke- Johnson potential (TB-mBJ) of CdSnAs2 compound is in good agreement with the available experimental data. Thermoelectric properties like thermopower, electricalconductivity scaled by relaxation time are calculated as a function of carrier concentration at different temperatures.
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