Abstract
Quantum dots, quantum rings, and, most recently, quantum dot-ring nanostructures have been studied for their interesting potential applications in nanoelectronic applications. Here, the electronic properties of a dot-ring hetero-nanostructure consisting of a graphene ring and graphene dot with a hexagonal boron nitride (h-BN) ring serving as barrier between ring and dot are investigated using density functional theory. Analysis of the character of the wave functions near the Fermi level and of the charge distribution of this dot-ring structure and calculations of the quantum transport properties find asymmetry in the conductance resonances leading to asymmetric I–V characteristics which can be modified by applying a negative voltage potential to the central graphene dot.
Highlights
IntroductionEver since the experimental discovery of graphene [1] an immense body of theoretical and experimental work has accumulated [2] that explores the unusual conduction and transport properties (for a review see for example [3]) and possible applications in nanoelectronics and nanooptical devices
Ever since the experimental discovery of graphene [1] an immense body of theoretical and experimental work has accumulated [2] that explores the unusual conduction and transport properties and possible applications in nanoelectronics and nanooptical devices
In this paper we explore whether a dot-ring nanostructure (DRN) can be realized by using a graphene ring, an inner graphene dot, and a hexagonal boron nitride (h-BN) ring serving as barrier between outer graphene ring and central dot
Summary
Ever since the experimental discovery of graphene [1] an immense body of theoretical and experimental work has accumulated [2] that explores the unusual conduction and transport properties (for a review see for example [3]) and possible applications in nanoelectronics and nanooptical devices. Electronic, magnetic, and optical properties of graphene quantum dots (QD) [4, 5], graphene nanoribbons [6, 7], and graphene quantum rings (QR) [8] have been analyzed. A recent example of the unusual quantum transport properties of graphene nanostructures is a gate-voltage-tunable graphene-boron nitride (BN) resonant tunneling transistor [14]. Chemical topology, and electronic properties of a lateral graphene-BN heterostructure were investigated in a first principle study [15]. The fabrication of graphene dots with well-defined shapes remains certainly a challenge though a possible experimental realization by using carbon nanotubes as masks in an edging process has been proposed [12]
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